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IDT6116SA90TDB Datasheet(PDF) 1 Page - Integrated Device Technology

Part # IDT6116SA90TDB
Description  CMOS STATIC RAM 16K (2K x 8 BIT)
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT6116SA90TDB Datasheet(HTML) 1 Page - Integrated Device Technology

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©2000 Integrated Device Technology, Inc.
FEBRUARY 2001
DSC-3089/03
1
Features
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x
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High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
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Low-power consumption
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Battery backup operation
– 2V data retention voltage (LA version only)
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Produced with advanced CMOS high-performance
technology
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CMOS process virtually eliminates alpha particle soft-error
rates
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Input and output directly TTL-compatible
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Static operation: no clocks or refresh required
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Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
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Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When
CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as
CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperatureapplicationsdemandingthehighestlevelofperformanceand
reliability.
Functional Block Diagram
CS
A 0
A 10
I/O 0
I/O 7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
VCC
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA


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