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IDT49FCT806BTEB Datasheet(PDF) 4 Page - Integrated Device Technology |
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IDT49FCT806BTEB Datasheet(HTML) 4 Page - Integrated Device Technology |
4 / 7 page IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES 9.2 4 POWER SUPPLY CHARACTERISTICS 2920 tbl 06 NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25 °C ambient. 3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ∆ICC DHNT + ICCD (fONO) ICC = Quiescent Current (ICCL, ICCH and ICCZ) ∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fO= Output Frequency NO= Number of Outputs at fO All currents are in milliamps and all frequencies are in megahertz. Parameter Test Conditions(1) Min. Typ.(2) Max. Unit ∆ICC Quiescent Power Supply Current TTL Inputs HIGH VCC = Max. VIN = 3.4V(3) — 0.5 2.0 mA ICCD Dynamic Power Supply Current(4) VCC = Max. Outputs Open OEA = OEB = GND 50% Duty Cycle VIN = VCC VIN = GND — 60 100 µA/ MHz/bit IC Total Power Supply Current(6) VCC = Max. Outputs Open fo = 25MHz VIN = VCC VIN = GND — 1.5 3.0 mA 50% Duty Cycle OEA = OEB =VCC Mon. Output Toggling VIN = 3.4V VIN = GND — 1.8 4.0 VCC = Max. Outputs Open fo = 50MHz VIN = VCC VIN = GND — 33 55.5(5) 50% Duty Cycle OEA = OEB = GND Eleven Outputs Toggling VIN = 3.4V VIN = GND — 33.5 57.5(5) |
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