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IDT71B74S10TP Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT71B74S10TP Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 9 page 14.1 7 IDT71B74 BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM COMMERCIAL TEMPERATURE RANGE AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%) 71B74S8 71B74S10 71B74S12 71B74S15 71B74S20 Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Match Cycle tADM Address to MATCH Valid — 8 — 10 — 12 — 15 — 20 ns tCSM Chip Select to MATCH Valid — 7 — 7 — 8 — 10 — 10 ns tCSMHI (1) Chip Select to MATCH HIGH — 7 — 8 — 8 — 8 — 8 ns tDAM Data Input to MATCH Valid — 7 — 8 — 10 — 12 — 12 ns tOEMHI (1) OE LOW to MATCH HIGH — 7 — 8 — 10 — 10 — 10 ns tWEMHI (1) WE LOW to MATCH HIGH — 7 — 8 — 10 — 10 — 10 ns tRSMHI (1) RESET LOW to MATCH HIGH — 8 — 10 — 10 — 12 — 15 ns tMHA MATCH Valid Hold From Address 2 — 2 — 2 — 2 — 2 — ns tMHD MATCH Valid Hold From Data 2 — 2 — 2 — 2 — 2 — ns NOTE: 3013 tbl 12 1. This parameter is guaranteed with the AC Load (Figure 3) by device characterization, but is not production tested. TIMING WAVEFORM OF WRITE CYCLE NO. 2 ( CS CS Controlled Timing) (1, 6) NOTES: 1. WE, CS must be inactive during all address transitions. 2. A write occurs during the overlap of a LOW WE and a LOW CS. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, I/O pins are in the output state and input signals must not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. 6. OE is continuously HIGH, OE ≥ VIH. If during the WE controlled write cycle the OE is LOW, tWP must be greater or equal to tWHZ + tDW to allow the I/O drivers to turn off and the data to be placed on the bus for the required tDW. If OE is HIGH during the WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW timing. 7. DATAOUT is never enabled, therefore the output is in High-Z state during the entire write cycle. 8. tWHZ is not included if OE remains HIGH during the write cycle. If OE is LOW during the Write Enabled write cycle then tWHZ must be added to tWP and tCW. 9. Transition is measured ±200mV from steady state. 3013 drw 12 CS OE t WC t AW ADDRESS WE DATA IN t DH t DW DATA VALID t AS t CW (5) t WR (3) DATAOUT (7) (2) t OW (9) t WHZ(8,9) |
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