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IDT71V428S15Y Datasheet(PDF) 7 Page - Integrated Device Technology

Part # IDT71V428S15Y
Description  3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT)
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT71V428S15Y Datasheet(HTML) 7 Page - Integrated Device Technology

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IDT71V428S, IDT71V428L, 3.3V CMOS Static RAM
4 Meg (1M x 4-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No.1 (WE Controlled Timing)(1,2,4)
NOTES:
1. A write occurs during the overlap of a LOW
CS and a LOW WE.
2.
OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to
be placed on the bus for the required tDW. If
OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as
the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the
CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No.2 (CS Controlled Timing)(1,4)
ADDRESS
CS
WE
DATAOUT
DATAIN
3623 drw 08
(5)
(3)
(3)
(2)
(5)
(5)
DATAIN VALID
HIGH IMPEDANCE
tWC
tAS
tWHZ
tWP
tCHZ
tOW
tDW
tDH
tWR
tAW
CS
ADDRESS
WE
3623 drw 09
DATAIN VALID
tAW
tWC
tCW
tAS
tWR
tDW
tDH
DATAIN


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