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FDB42AN15_F085 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDB42AN15_F085 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDB42AN15A0_F085 Rev. C1 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 150 - - V IDSS Drain to Source Leakage Current VDS=150V, TJ = 25oC - - 1 μA VGS = 0V TJ = 175oC(Note 4) - - 1 mA IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.0 4.0 V rDS(on) Drain to Source On Resistance ID = 12A, VGS= 10V TJ = 25oC - 36 42 m Ω TJ = 175oC(Note 4) - 89 104 m Ω Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 2040 - pF Coss Output Capacitance - 216 - pF Crss Reverse Transfer Capacitance - 48 - pF Rg Gate Resistance f = 1MHz - 1 - Ω Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 75V ID = 12A -30 36 nC Qg(th) Threshold Gate Charge VGS = 0 to 2V - 3.7 4.5 nC Qgs Gate to Source Gate Charge -9 - nC Qgd Gate to Drain “Miller“ Charge - 6.5 - nC Switching Characteristics Drain-Source Diode Characteristics Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. ton Turn-On Time VDD = 75V, ID = 12A, VGS = 10V, RGEN = 7.5Ω - - 30 ns td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 11 - ns td(off) Turn-Off Delay Time - 22 - ns tf Fall Time - 3 - ns toff Turn-Off Time - - 29 ns VSD Source to Drain Diode Voltage ISD = 12A, VGS = 0V - - 1.25 V ISD = 6A, VGS = 0V - - 1.2 V Trr Reverse Recovery Time IF = 12A, dISD/dt = 100A/μs, VDD=120V -67 72 ns Qrr Reverse Recovery Charge - 193 222 nC |
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