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FDB8896_F085 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDB8896_F085 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Package current limitation is 80A. 2: Starting TJ = 25°C, L = 36μH, IAS = 64A, VDD = 27V, VGS = 10V. 3: Pulse width = 100s. 4 Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 μA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 35A, VGS = 10V - 0.0049 0.0057 Ω ID = 35A, VGS = 4.5V - 0.0059 0.0068 ID = 35A, VGS = 10V, TJ = 175 oC - 0.0078 0.0094 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 2525 - pF COSS Output Capacitance - 490 - pF CRSS Reverse Transfer Capacitance - 300 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 2.3 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 35A Ig = 1.0mA -48 67 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 25 36 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 2.3 3.0 nC Qgs Gate to Source Gate Charge - 8 - nC Qgs2 Gate Charge Threshold to Plateau - 5.7 - nC Qgd Gate to Drain “Miller” Charge - 9.5 - nC tON Turn-On Time VDD = 15V, ID = 35A VGS = 4.5V, RGS = 6.2Ω - - 167 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 102 - ns td(OFF) Turn-Off Delay Time - 58 - ns tf Fall Time - 44 - ns tOFF Turn-Off Time - - 153 ns VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V ISD = 20A - - 1.0 V trr Reverse Recovery Time ISD = 35A, dISD/dt = 100A/μs- - 27 ns QRR Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/μs- - 12 nC ©2010 Fairchild Semiconductor Corporation FDB8896_F085 Rev. A |
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