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FDB86363_F085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDB86363_F085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 1 page  June 2014 ©2014 Fairchild Semiconductor Corporation FDB86363_F085 Rev. C2 www.fairchildsemi.com 1 FDB86363_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 2.4 m Ω Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter Ratings Units VDSS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ±20 V ID Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 A Pulsed Drain Current TC = 25°C See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 512 mJ PD Power Dissipation 300 W Derate Above 25oC2.0 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 oC RθJC Thermal Resistance, Junction to Case 0.5 oC/W RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB86363 FDB86363_F085 D2-PAK(TO-263) 330mm 24mm 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. G S D D G S TO-263 FDB SERIES For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging |
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