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IDT7134SA35PB Datasheet(PDF) 8 Page - Integrated Device Technology

Part # IDT7134SA35PB
Description  HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7134SA35PB Datasheet(HTML) 8 Page - Integrated Device Technology

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6.04
8
IDT7134SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/
W
W
W
W
W CONTROLLED TIMING(1, 5, 8)
TIMING WAVEFORM OF WRITE CYCLE NO. 2,
CE
CE
CE
CE
CE CONTROLLED TIMING(1, 5)
NOTES:
1. R/
W or CE must be High during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of a
CE =VIL and R/W = VIL.
3. tWR is measured from the earlier of
CE or R/W going High to the end-of-write cycle.
4. During this period, the I/O pins are in the output state, and input signals must not be applied.
5. If the
CE Low transition occurs simultaneously with or after the R/W Low transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (
CE or R/W )is asserted last.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured + 500mV from steady state with the Output
Test Load (Figure 2).
8. If
OE is Low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to
be placed on the bus for the required tDW. If
OE is High during an R/W controlled write cycle, this requirement does not apply and the write pulse can be
as short as the specified tWP.
2720 drw 12
R/
W
tWC
ADDRESS
DATAIN
CE
1.20 in
tDW
tWR(3)
tDH
tEW(2)
tAW
tAS(6)
CE
2720 drw 11
tAW
tAS(6)
tDW
DATAIN
ADDRESS
tWC
R/
W
tWP
tDH
DATAOUT
tWZ (7)
(4)
(4)
(2)
tOW
OE
(7)
tHZ
tLZ
(7)
tHZ
tWR(3)


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