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IDT7143SA25JB Datasheet(PDF) 11 Page - Integrated Device Technology

Part # IDT7143SA25JB
Description  HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7143SA25JB Datasheet(HTML) 11 Page - Integrated Device Technology

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6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM
Military, Industrial and Commercial Temperature Ranges
11
NOTES:
1.
R/
W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of a
CE = VIL and a R/W = VIL.
3.
tWR is measured from the earlier of
CE or R/W going HIGH to the end of the write cycle.
4.
During this period, the I/O pins are in the output state, and input signals must not be applied.
5.
If the
CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6.
Timing depends on which enable signal (
CE or R/W) is asserted last.
7.
Timing depends on which enable signal is de-asserted first,
CE or OE.
8. If
OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If
OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified tWP.
9. R/
W for either upper or lower byte.
Write Cycle No. 2 (CE Controlled Timing)(1,5)
Timing Waveform of Write Cycle No. 1 (R/W Controlled Timing)(1,5,8)
CE
2746 drw 09
tAW
tAS
tWR
tDW
DATAIN
ADDRESS
tWC
R/
W
tWP
tDH
DATAOUT
tWZ
(7)
(4)
(2)
tOW
OE
(9)
tLZ
(7)
tHZ
(6)
(3)
(4)
(7)
tHZ
CE
2746 drw 10
tAW
tAS
tWR
tDW
DATAIN
ADDRESS
tWC
R/
W
tEW
tDH
(9)
(6)
(2)


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