7.4

4

IDT7M1024

4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS OVER THE

± 10%)

IDT7M1024SxxG, IDT7M1024SxxGB

–20

–25

–30

Symbol

Parameter

Test Condition

Version

Typ. Max.

Typ.

Max.

Typ.

Max.

Unit

Dynamic

Mil.

—

—

—

1480

—

1440

mA

Operating

Outputs Open

Current (Both

(1)

Com’l.

—

1440

—

1360

—

—

Ports Active)

Standby

L_

CE and

Mil.

—

—

—

680

—

560

mA

Current (Both

R_

Ports—TTL

(1)

Com’l.

—

720

—

640

—

—

Level Inputs)

Standby

L_

Mil.

—

—

—

1080

—

1000

mA

Current (One

Active Port

Port—TTL

Outputs Open,

Com’l.

—

1080

—

1000

—

—

Level Inputs)

(1)

Full Standby

Both Ports R_

CE

Mil.

—

—

—

80

—

80

mA

Current (Both

and L_

Com’l.

—

80

—

80

—

—

Level Inputs)

Full Standby

One Port L_

CE or R_CE ≥

Mil.

—

—

—

1040

—

960

mA

Current (One

Port—CMOS

≤ 0.2V, Active Port

Com’l.

—

1040

—

960

—

—

Level Inputs)

(1)

NOTES:

2809 tbl 09

CONDITIONS” of input levels of GND to 3V.

2. f = 0 means no address, clock, or control lines change. Applies only to inputs at CMOS level standby.

DC ELECTRICAL CHARACTERISTICS OVER THE

± 10%)

IDT7M1024

Symbol

Parameter

Test Condition

Min.

Max.

Unit

Input Leakage Current

—40

µA

Output Leakage Current

—10

µA

Output LOW Voltage

—

0.4

V

Output HIGH Voltage

2.4

—

V

2809 tbl 08