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UPA1813GR-9JG Datasheet(PDF) 1 Page - NEC |
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UPA1813GR-9JG Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998, 1999 MOS FIELD EFFECT TRANSISTOR µµµµPA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D13294EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 25 m Ω MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 30 m Ω MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 40 m Ω MAX. (VGS = –2.5 V, ID = –2.5 A) ORDERING INFORMATION PART NUMBER PACKAGE µPA1813GR-9JG Power TSSOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –12 V Gate to Source Voltage VGSS –10/+5 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse) Note1 ID(pulse) ±20 A Total Power Dissipation Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 5000 mm 2 x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit : mm) 14 85 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 0.1 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 0.8 MAX. 3.15 ±0.15 3.0 ±0.1 0.65 0.10 M 0.27 +0.03 –0.08 0.25 0.5 3 °+5° –3 ° 0.6 +0.15 –0.1 1.2 MAX. 0.1±0.05 1.0±0.05 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain |
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