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FDS8949_F085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS8949_F085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  tm February 2010 ©20 10 Fairchild Semiconductor Corporation FDS8949 _F085 Rev. A www.fairchildsemi.com 1 FDS8949 _F085 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29m Ω Features Max rDS(on) = 29mΩ at VGS = 10V Max rDS(on) = 36mΩ at VGS = 4.5V Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability Qualified to AEC Q101 General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications Inverter Power suppliers MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) 6 A -Pulsed 20 EAS Drain-Source Avalanche Energy (Note 3) 26 mJ PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) (Note 1b) 1.6 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C RθJA Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 81 °C/W RθJA Thermal Resistance-Single operation, Junction to Ambient (Note 1b) 135 RθJC Thermal Resistance, Junction to Case (Note 1) 40 Device Marking Device Reel Size Tape Width Quantity FDS8949 FDS8949 _F085 13’’ 12mm 2500 units Pin 1 SO-8 D1 D1 D2 D2 S2 S1 G1 G2 RoHS compliant |
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