E28F010-120 datasheet(4/30 Pages) INTEL

Part #	E28F010-120

Description	1024K (128K x 8) CMOS FLASH MEMORY

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Manufacturer	INTEL [Intel Corporation]

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28F010

APPLICATIONS

The 28F010 flash memory provides nonvolatility

along with the capability to perform over 100000

electrical chip-erasurereprogram cycles These fea-

tures make the 28F010 an innovative alternative to

disk

EEPROM

and battery-backed static RAM

Where periodic updates of code and data-tables are

required the 28F010’s reprogrammability and non-

volatility make it the obvious and ideal replacement

for EPROM

Primary applications and operating systems stored

in flash eliminate the slow disk-to-DRAM download

process This results in dramatic enhancement of

performance and substantial reduction of power

consumption

a consideration particularly impor-

tant in portable equipment Flash memory increases

flexibility with electrical chip erasure and in-system

update capability of operating systems and applica-

tion code With updatable code system manufactur-

ers can easily accommodate last-minute changes as

revisions are made

In diskless workstations and terminals network traf-

fic reduces to a minimum and systems are instant-

on Reliability exceeds that of electromechanical

media Often in these environments power interrup-

tions force extended re-boot periods for all net-

worked terminals This mishap is no longer an issue

if boot code operating systems communication pro-

tocols and primary applications are flash-resident in

each terminal

For embedded systems that rely on dynamic RAM

disk for main system memory or nonvolatile backup

storage the 28F010 flash memory offers a solid

state alternative in a minimal form factor

The

28F010 provides higher performance lower power

consumption instant-on capability and allows an

‘‘execute in place’’ memory hierarchy for code and

data table reading Additionally the flash memory is

more rugged and reliable in harsh environments

where extreme temperatures and shock can cause

disk-based systems to fail

The need for code updates pervades all phases of a

system’s life

from prototyping to system manufac-

ture to after-sale service The electrical chip-erasure

and reprogramming ability of the 28F010 allows in-

circuit alterability this eliminates unnecessary han-

dling and less-reliable socketed connections while

adding greater test manufacture and update flexi-

bility

Material and labor costs associated with code

changes increases at higher levels of system inte-

gration

the most costly being code updates after

sale Code ‘‘bugs’’ or the desire to augment system

functionality prompt after-sale code updates Field

revisions to EPROM-based code requires the re-

moval of EPROM components or entire boards With

the 28F010 code updates are implemented locally

via an edge-connector or remotely over a commun-

cation link

For systems currently using a high-density static

RAMbattery configuration for data accumulation

flash memory’s inherent nonvolatility eliminates the

need for battery backup The concern for battery

failure no longer exists an important consideration

for portable equipment and medical instruments

both requiring continuous performance In addition

flash memory offers a considerable cost advantage

over static RAM

Flash memory’s electrical chip erasure byte pro-

grammability and complete nonvolatility fit well with

data accumulation and recording needs Electrical

chip-erasure gives the designer a ‘‘blank slate’’ in

which to log or record data Data can be periodically

off-loaded for analysis and the flash memory erased

producing a new ‘‘blank slate’’

A high degree of on-chip feature integration simpli-

fies memory-to-processor interfacing Figure 4 de-

picts two 28F010s tied to the 80C186 system bus

The 28F010’s architecture minimizes interface cir-

cuitry needed for complete in-circuit updates of

memory contents

The outstanding feature of the TSOP (Thin Small

Outline Package) is the 12 mm thickness With stan-

dard and reverse pin configurations TSOP reduces

the number of board layers and overall volume nec-

essary to layout multiple 28F010s TSOP is particu-

larly suited for portable equipment and applications

requiring large amounts of flash memory Figure 3

illustrates the TSOP Serpentine layout

With cost-effective in-system reprogramming ex-

tended cycling capability

and true nonvolatility

the 28F010 offers advantages to the alternatives

EPROMs EEPROMs battery backed static RAM

or disk

EPROM-compatible read specifications

straight-forward interfacing and in-circuit alterability

offers designers unlimited flexibility to meet the high

standards of today’s designs

4

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