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TE28F320S3-100 Datasheet(PDF) 11 Page - Intel Corporation |
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TE28F320S3-100 Datasheet(HTML) 11 Page - Intel Corporation |
11 / 52 page E 28F160S3, 28F320S3 11 ADVANCE INFORMATION Commands are written using standard micro- processor write timings. The CUI contents serve as input to the WSM that controls the block erase, programming, and lock-bit configuration. The internal algorithms are regulated by the WSM, including pulse repetition, internal verification, and margining of data. Addresses and data are internally latched during write cycles. Writing the appropriate command outputs array data, identifier codes, or Status Register data. Interface software that initiates and polls progress of block erase, programming, and lock- bit configuration can be stored in any block. This code is copied to and executed from system RAM during flash memory updates. After successful completion, reads are again possible via the Read Array command. Block erase suspend allows system software to suspend a block erase to read or write data from any other block. Program suspend allows system software to suspend a program to read data from any other flash memory array location. 2.1 Data Protection Depending on the application, the system designer may choose to make the VPP power supply switchable or hardwired to VPPH1/2. The device supports either design practice, and encourages optimization of the processor- memory interface. When VPP ≤ VPPLK, memory contents cannot be altered. When high voltage is applied to VPP, the two-step block erase, program, or lock-bit configuration command sequences provide protection from unwanted operations. All write functions are disabled when VCC voltage is below the write lockout voltage VLKO or when RP# is at VIL. The device’s block locking capability provides additional protection from inadvertent code or data alteration. Figure 5. Memory Map |
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