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E28F200BL-T150 Datasheet(PDF) 4 Page - Intel Corporation |
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E28F200BL-T150 Datasheet(HTML) 4 Page - Intel Corporation |
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4 / 42 page  28F200BL-TB 28F002BL-TB Program and Erase Automation allow program and erase operations to be executed using a two- write command sequence to the CUI The internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for program and erase operations including verifications there- by unburdening the microprocessor or microcontrol- ler Writing of memory data is performed in word or byte increments for the 28F200BL family and in byte increments for the 28F002BL family typically within 11 ms The Status Register (SR) indicates the status of the WSM and whether the WSM successfully completed the desired program or erase operation Maximum Access Time of 150 ns (tACC) is achieved over the commercial temperature range (0 Cto a 70 C) over VCC supply voltage range (30V to 36V 45V to 55V) and 50 pF output load IPP Program current is 40 mA for x16 operation and 30 mA for x8 operation IPP Erase current is 30 mA maximum VPP erase and programming voltage is 114V to 126V (VPP e 12V g5%) un- der all operating conditions Typical ICC Active Current of 15 mA is achieved for the x16 products and the x8 products The 2-Mbit flash family is also designed with an Au- tomatic Power Savings (APS) feature to minimize system battery current drain and allow for extremely low power designs Once the device is accessed to read the array data APS mode will immediately put the memory in static mode of operation where ICC active current is typically 08 mA until the next read is initiated When the CE and RP pins are at VCC and the BYTE pin (28F200BL-only) is at either VCC or GND the CMOS Standby mode is enabled where ICC is typically 40 mA A Deep Power-down Mode is enabled when the RP pin is at ground minimizing power consumption and providing write protection during power-up con- ditions ICC current during deep power-down mode is 020 mA typical An initial maximum access time or Reset Time of 600 ns is required from RP switching until outputs are valid Equivalently the device has a maximum wake-up time of 1 ms until writes to the Command User Interface are recog- nized When RP is at ground the WSM is reset the Status Register is cleared and the entire device is protected from being written to This feature pre- vents data corruption and protects the code stored in the device during system reset The system Reset pin can be tied to RP to reset the memory to nor- mal read mode upon activation of the Reset pin When the CPU enters reset mode it expects to read the contents of a memory location Furthermore with on-chip programerase automation in the 2-Mbit family and the RP functionality for data pro- tection after the CPU is reset and even if a program or erase command is issued the device will not rec- ognize any operation until RP returns to its normal state For the 28F200BL Byte-wide or Word-wide In- putOutput Control is possible by controlling the BYTE pin When the BYTE pin is at a logic low the device is in the byte-wide mode (x8) and data is read and written through DQ 07 During the byte- wide mode DQ 814 are tri-stated and DQ15 Ab1 becomes the lowest order address pin When the BYTE pin is at a logic high the device is in the word-wide mode (x16) and data is read and written through DQ 015 13 Applications The 2-Mbit low power boot block flash memory fami- ly combines high density 3V operation high per- formance cost-effective flash memories with block- ing and hardware protection capabilities Its flexibility and versatility will reduce costs throughout the prod- uct life cycle Flash memory is ideal for Just-In-Time production flow reducing system inventory and costs and eliminating component handling during the production phase During the product life cycle when code updates or feature enhancements be- come necessary flash memory will reduce the up- date costs by allowing either a user-performed code change via floppy disk or a remote code change via a serial link The 2-Mbit boot block flash memory family provides full function blocked flash memories suitable for a wide range of applications These ap- plications include Extended PC BIOS Handy Digi- tal Cellular Phone program and data storage and various other portable embedded applications where both program and data storage are required Reprogrammable systems such as Notebook and Palmtop computers are ideal applications for the 2-Mbit low power flash products Portable and han- dheld personal computer applications are becoming more complex with the addition of power manage- ment software to take advantage of the latest micro- processor technology the availability of ROM-based application software pen tablet code for electronic handwriting and diagnostic code Figure 1 shows an example of a 28F200BL-T application This increase in software sophistication augments the probability that a code update will be required after the PC is shipped The 2-Mbit low power flash memory products provide an inexpensive update so- 4 |
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