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RC28F320J3A-110 Datasheet(PDF) 5 Page - Intel Corporation |
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RC28F320J3A-110 Datasheet(HTML) 5 Page - Intel Corporation |
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5 / 58 page  Preliminary v 28F128J3A, 28F640J3A, 28F320J3A Revision History Date of Revision Version Description 07/07/99 -001 Original Version 08/03/99 -002 A0–A2 indicated on block diagram 09/07/99 -003 Changed Minimum Block Erase time,IOL, IOH, Page Mode and Byte Mode currents. Modified RP# on AC Waveform for Write Operations 12/16/99 -004 Changed Block Erase time and tAVWH Removed all references to 5 V I/O operation Corrected Ordering Information, Valid Combinations entries Changed Min program time to 211 µs Added DU to Lead Descriptions table Changed Chip Scale Package to Ball Grid Array Package Changed default read mode to page mode Removed erase queuing from Figure 10, Block Erase Flowchart 03/16/00 -005 Added Program Max time Added Erase Max time Added Max page mode read current Moved tables to correspond with sections Fixed typographical errors in ordering information and DC parameter table Removed VCCQ1 setting and changed VCCQ2/3 to VCCQ1/2 Added recommended resister value for STS pin Change operation temperature range Removed note that rp# could go to 14 V Removed VOL of 0.45 V Removed VOH of 2.4 V Updated ICCR Typ values Added Max lock-bit program and lock times Added note on max measurements 06/26/00 -006 Updated cover sheet statement of 700 million units to one billion. Corrected Table 10 to show correct maximum program times. Corrected error in Max block program time in section 6.7 Corrected typical erase time in section 6.7 2/15/01 -007 Updated cover page to reflect 100K minimum erase cycles. Updated cover page to reflect 110 ns 32M read speed. Removed Set Read Configuration command from Table 4. Updated Table 8 to reflect reserved bits are 1-7; not 2-7. Updated Table 16 bit 2 definition from R to PSS. Changed VPENLK Max voltage from 0.8 V to 2.0 V, Section 6.4, DC Characteristics Updated 32Mbit Read Parameters R1, R2 and R3 to reflect 110ns, Sec- tion 6.5, AC Characteristics–Read-Only Operations (1,2) Updated write parameter W13 (tWHRL) from 90 ns to 500 ns, Section 6.6, AC Characteristics–Write Operations Updated Max. Program Suspend Latency W16 (tWHRH1) from 30 to 75 µs, Section 6.7, Block Erase, Program, and Lock-Bit Configuration Per- formance (1,2,3) 04/13/01 -008 Revised Section 7.0, Ordering Information |
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