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GT28F160S3-120 Datasheet(PDF) 5 Page - Intel Corporation

Part # GT28F160S3-120
Description  WORD-WIDE FlashFile MEMORY FAMILY
Download  52 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

GT28F160S3-120 Datasheet(HTML) 5 Page - Intel Corporation

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E
28F160S3, 28F320S3
5
ADVANCE INFORMATION
1.0
INTRODUCTION
This datasheet contains 16- and 32-Mbit Word-
Wide
FlashFileTM
memory
(28F160S3
and
28F320S3) specifications. Section 1 provides a
flash memory overview. Sections 2, 3, 4, and 5
describe the memory organization and functionality.
Section
6
covers
electrical
specifications
for
extended temperature product offerings.
1.1
New Features
The Word-Wide FlashFile memory family maintains
basic compatibility with Intel’s 28F016SA and
28F016SV. Key enhancements include:
• Common Flash Interface (CFI) Support
• Scaleable Command Set (SCS) Support
• Low Voltage Technology
• Enhanced Suspend Capabilities
They share a compatible Status Register, basic
software commands, and pinout. These similarities
enable a clean migration from the 28F016SA or
28F016SV. When upgrading, it is important to note
the following differences:
• Because of new feature and density options,
the devices have different manufacturer and
device identifier codes. This allows for software
optimization.
• New software commands.
• To take advantage of low voltage on the
28F160S3
and
28F320S3,
allow
VPP
connection
to
VCC.
The
28F160S3
and
28F320S3 do not support a 12V VPP option.
1.2
Product Overview
The Word-Wide FlashFile memory family provides
density upgrades with pinout compatibility for the
16-
and
32-Mbit
densities.
They
are
high-
performance memories arranged as 1 Mword and
2 Mwords of 16 bits or 2 Mbyte and 4 Mbyte of
8 bits. This data is grouped in thirty-two and sixty-
four 64-Kbyte blocks that can be erased, locked
and unlocked in-system. Figure 1 shows the block
diagram, and Figure 5 illustrates the memory
organization.
This family of products are optimized for fast factory
programming and low power designs. Specifically
designed for 3V systems, the 28F160S3 and
28F320S3 support read operations at 2.7V–3.6V
Vcc with block erase and program operations at
2.7V–3.6V
and
5V
VPP.
High
programming
performance is achieved through highly-optimized
write buffers. A 5V VPP option is available for even
faster factory programming. For a simple low power
design, VCC and VPP can be tied to 2.7V.
Additionally, the dedicated VPP pin gives complete
data protection when VPP
≤ VPPLK.
Internal
VPP
detection
circuitry
automatically
configures
the
device
for
optimized
write
operations.
A Common Flash Interface (CFI) permits OEM-
specified software algorithms to be used for entire
families of devices. This allows device-independent,
JEDEC
ID-independent,
and
forward-
and
backward-compatible
software
support
for
the
specified flash device families. Flash vendors can
standardize their existing interfaces for long-term
compatibility.
Scaleable Command Set (SCS) allows a single,
simple software driver in all host systems to work
with all SCS-compliant flash memory devices,
independent
of
system-level
packaging
(e.g.,
memory card, SIMM, or direct-to-board placement).
Additionally,
SCS
provides
the
highest
system/device data transfer rates and minimizes
device and system-level implementation costs.
A Command User Interface (CUI) serves as the
interface
between
the
system
processor
and
internal
device
operation.
A
valid
command
sequence written to the CUI
initiates
device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
64-Kbyte
blocks
typically
within
tWHQV2/EHQV2
independent of other blocks. Each block can be
independently erased 100,000 times. Block erase
suspend mode allows system software to suspend
block erase to read or write data from any other
block.
Data is programmed in byte, word or page
increments. Program suspend mode enables the
system to read data or execute code from any other
flash memory array location.


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