 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF7524D1PBF Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF7524D1PBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRF7524D1PbF 2 www.irf.com MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ––– 0.17 0.27 VGS = -4.5V, ID = -1.2A ––– 0.28 0.40 VGS = -2.7V, ID = -0.60A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 1.3 ––– ––– S VDS = -10V, ID = -0.60A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 5.4 8.2 ID = -1.2A Qgs Gate-to-Source Charge ––– 0.96 1.4 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 VGS = -4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 9.1 ––– VDD = -10V tr Rise Time ––– 35 ––– ID = -1.2A td(off) Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω tf Fall Time ––– 43 ––– RD = 8.3Ω, Ciss Input Capacitance ––– 240 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 64 ––– ƒ = 1.0MHz, See Fig. 5 RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current IGSS Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– -1.25 ISM Pulsed Source Current (Body Diode) ––– ––– -9.6 VSD Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 52 78 ns TJ = 25°C, IF = -1.2A Qrr Reverse Recovery Charge ––– 63 95 nC di/dt = 100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units Conditions IF(av) Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C 1.4 Fig.14 TA = 70°C ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated Surge current 11 10ms sine or 6ms Rect. pulse load condition & with VRRM applied A A Schottky Diode Maximum Ratings Parameter Max. Units Conditions VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C 0.62 IF = 2.0A, TJ = 25°C 0.39 IF = 1.0A, TJ = 125°C 0.57 IF = 2.0A, TJ = 125°C . IRM Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C 8 TJ = 125°C Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR Schottky Diode Electrical Specifications V mA ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) See |
Similar Part No. - IRF7524D1PBF |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
