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BUK654R0-75C Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK654R0-75C Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BUK654R0-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 September 2010 3 of 14 NXP Semiconductors BUK654R0-75C N-channel TrenchMOS FET 4. Limiting values [1] -16V accumulated duration not to exceed 168 hrs. [2] Accumulated pulse duration not to exceed 5mins. [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 75 V VGS gate-source voltage DC [1] -16 16 V Pulsed [2] -20 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 1 [3] - 120 A Tmb =100 °C; VGS = 10 V; see Figure 1 [3] - 120 A IDM peak drain current Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3 - 670 A Ptot total power dissipation Tmb =25°C; see Figure 2 - 306 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25°C [3] - 120 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 670 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =120 A; Vsup ≤ 75 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped - 523 mJ EDS(AL)R repetitive drain-source avalanche energy [4][5][6] --J |
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