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MMBFJ310 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MMBFJ310 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 January 2015 MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Ordering Information Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150 °C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Part Number Top Mark Package Packing Method MMBFJ309 6U SOT-23 3L Tape and Reel MMBFJ310 6T SOT-23 3L Tape and Reel Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C Symbol Parameter Max. Unit PD Total Device Dissipation 350 mW Derate Above 25 °C2.8 mW/ °C RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Description This device is designed for VHF/UHF amplifier, oscil- lator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from process 92. Source & Drain are interchangeable. SOT-23 G D S Note: Source & Drain are interchangeable |
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Similar Description - MMBFJ310 |
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