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VS28F016SV Datasheet(PDF) 3 Page - Intel Corporation |
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VS28F016SV Datasheet(HTML) 3 Page - Intel Corporation |
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3 / 50 page  VS28F016SV MS28F016SV FlashFileTM Memory 10 INTRODUCTION The documentation of the Intel VSMS28F016SV memory device includes this data sheet a detailed user’s manual and a number of application notes all of which are referenced at the end of this data sheet The data sheet is intended to give an overview of the chip feature-set and of the operating ACDC specifications The 28F016SA (compatible with VSMS28F016SV) User’s Manual provides com- plete descriptions of the user modes system inter- face examples and detailed descriptions of all princi- ples of operation It also contains the full list of software algorithm flowcharts and a brief section on compatibility with the Intel VE28F008 and M28F008 11 Enhanced Features The VSMS28F016SV is backwards compatible with the VE28F008 and M28F008 and offers the follow- ing enhancements SmartVoltage Technology Selectable 50V or 120V VPP VPP Level Bit in Block Status Register Additional RYBY Configuration Pulse-On-WriteErase Additional Upload Device Information Command Feedback Device Revision Number Device Proliferation Code Device Configuration Code x8x16 Architecture Block Locking 2 Page Buffers Instruction Queuing 12 Product Overview The VSMS28F016SV is a high-performance 16-Mbit (16777216-bit) block erasable non-volatile random access memory organized as either 1 Mword x 16 or 2 Mbyte x 8 The VSMS28F016SV includes thirty-two 64-KB (65536 byte) blocks or thirty-two 32-KW (32768 word) blocks A chip mem- ory map is shown in Figure 3 The implementation of a new architecture with many enhanced features will improve the device op- erating characteristics and result in greater product reliability and ease of use The VSMS28F016SV incorporates SmartVoltage technology providing VCC operation at both 33V and 50V and program and erase capability at VPP e 120V or 50V Operating at VCC e 33V the VSMS28F016SV consumes approximately one-half the power consumption at 50V VCC while 50V VCC provides highest read performance capability VPP e 50V operation eliminates the need for a separate 120V converter while VPP e 120V maximizes writeerase performance In addition to the flexible program and erase voltages the dedicated VPP gives complete code protection with VPP s VPPLK Depending on system design specifications the VSMS28F016SV is capable of supporting 80 ns access times with a VCC of 50V g5% and loading of 30 pF 85 ns access times with a VCC of 50V g10% and loading of 100 pF 120 ns access times with a VCC of 33V g5% and loading of 50 pF A 35 input pin configures the device’s internal cir- cuitry for optimal 33V or 50V ReadWrite operation A Command User Interface (CUI) serves as the sys- tem interface between the microprocessor or micro- controller and the internal memory operation Internal Algorithm Automation allows ByteWord Writes and Block Erase operations to be executed using a Two-Write command sequence to the CUI in the same way as the VE28F008 or M28F008 8-Mbit FlashFile memory A super-set of commands has been added to the basic VE28F008 or M28F008 command-set to achieve higher write performance and provide addi- tional capabilities These new commands and fea- tures include Page Buffer Writes to Flash Command Queuing Capability Automatic Data Writes during Erase Software Locking of Memory Blocks Two-Byte Successive Writes in 8-bit Systems Erase All Unlocked Blocks 3 |
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