2

Specifications 2N7288D, 2N7288R, 2N7288H - Registration Pending

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

MAX

Drain-Source Breakdown Volts

BVDSS

VGS = 0, ID = 1mA

250

-

V

Gate-Threshold Volts

VGS(th)

VDS = VGS, ID = 1mA

2.0

4.0

V

Gate-Body Leakage Forward

IGSSF

VGS = +20V

-

100

nA

Gate-Body Leakage Reverse

IGSSR

VGS = -20V

-

100

nA

Zero-Gate Voltage

Drain Current

IDSS1

IDSS2

IDSS3

VDS = 250V, VGS = 0

VDS = 200V, VGS = 0

-

-

-

1

0.025

0.25

mA

Rated Avalanche Current

IAR

Time = 20

µs

-

27

A

Drain-Source On-State Volts

VDS(on)

VGS = 10V, ID = 9A

-

3.92

V

Drain-Source On Resistance

RDS(on)

VGS = 10V, ID = 6A

-

0.415

Ω

Turn-On Delay Time

td(on)

VDD = 125V, ID = 9A

-

46

ns

Rise Time

tr

Pulse Width = 3

µs

-

100

Turn-Off Delay Time

td(off)

Period = 300

µs, Rg = 25Ω

-

368

Fall Time

tf

0

≤ VGS ≤ 10 (See Test Circuit)

-

124

Gate-Charge Threshold

QG(th)

VDD = 125V, ID = 9A

IGS1 = IGS2

0

≤ VGS ≤ 20

28

nc

Gate-Charge On State

QG(on)

29

116

Gate-Charge Total

QGM

55

220

Plateau Voltage

VGP

2

10

V

Gate-Charge Source

QGS

4

18

nc

Gate-Charge Drain

QGD

12

48

Diode Forward Voltage

VSD

ID = 9A, VGD = 0

0.6

1.8

V

Reverse Recovery Time

TT

I = 9A; di/dt = 100A/

µs

-

840

ns

Junction-To-Case

R

θjc

-

1.67

Junction-To-Ambient

R

θja

Free Air Operation

-

60

FIGURE 1. SWITCHING TIME TESTING

FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM

VDD

RL

V1

Rg

VDS

DUT

IL

VC

E1

L

0.06

Ω

E1 = 0.5 BVDSS

VC = 0.75 BVDSS