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MSDT100-12 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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MSDT100-12 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 5 page  MSDT100 Document Number: MSDT100 www.smsemi.com Jan.15,2015 2 ◆Thyristor Maximum Ratings Electrical and Thermal Characteristics Symbol Item Conditions Values Units ITAV Average On-State Current Tc=92℃, Single Phase half wave 180 o conduction 100 A ITSM Surge On-State Current TVJ=45℃ t=10ms (50Hz), sine VR=0 1200 A i 2t Circuit Fusing Consideration 7200 A 2s Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1 min 3000 V Tvj Operating Junction Temperature -40 to +125 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M5) 3±15% Nm Ms To heatsink(M5) 3±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/μs 150 A/μs dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/μs Symbol Item Conditions Values Units Min. Typ. Max. VTM Peak On-State Voltage, max. T=25℃ IT =300A 1.70 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,VR=VRRM ,VD=VDRM 20 mA VTO Threshold voltage TVJ = TVJM 0.9 V rT Slope resistance 2 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD Max. required DC gate voltage tt t i TVJ =125℃ , VD =2/3VDRM 0.25 V IGD Max. required DC gate current tt t i TVJ =125℃ , VD =2/3VDRM 6 mA IL Maximum latching current TVJ =25℃ , RG=33Ω 300 600 mA IH Maximum holding current TVJ =25℃ , VD =6V 150 250 mA tgd Gate controlled delay time TVJ =25℃,IG=1A,diG/dt=1A/us 1 us tq Circuit commutated turn-off time TVJ = TVJM 100 us Rth(j-c) Thermal Impedance, max. Junction to Case 0.26 ℃ /W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃ /W |
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Similar Description - MSDT100-12 |
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