2SB772-R datasheet(1/3 Pages) KEXIN

Part #	2SB772-R

Description	PNP Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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DIP Type

Transistors

1

www.kexin.com.cn

PNP

Transistors

■

Features

●

PNP transistor High current output up to 3A

●

Low Saturation Voltage

●

Complement to 2SD882

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current to Continuous

IC

-3

A

Collector Dissipation

Pc

1

W

Junction Temperature

TJ

150

℃

Storage Temperature

Tstg

-55 to 150

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

Ic=-100uA ,IE=0

-40

V

Collector-emitter breakdown voltage

VCEO

IC= -10 mA , IB=0

-30

V

Emitter-base breakdown voltage

VEBO

IE= -100 uA ,IC=0

-6

V

Collector cut-off current

ICBO

VCB=-40 V , IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-6V , IC=0

-1

μA

VCE= -2V, IC= -1A

60

400

VCE=-2V, IC= -100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB=- 0.2A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB= -0.2A

-1.5

V

Transition frequency

f T

VCE=-5 V, IC=-0.1mA,f = 10MHz

50

MHz

DC current gain

hFE

2SB772

■

Classification of hfe(1)

Type

2SB772-R

2SB772-Q

2SB772-P

2SB772-E

Range

60-120

100-200

160-320

200-400

3.25± 0.20

8.00± 0.30

ø3.20± 0.10

0.75± 0.10

#1

0.75± 0.10

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

1.60± 0.10

1.75± 0.20

(0.50)

(1.00)

0.50

+0.10

–0.05

TO-126

3. Emitter

1. Base

2. Collector

Unit:mm

1 2 3

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