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UPA807T Datasheet(PDF) 2 Page - NEC

Part No. UPA807T
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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µPA807T
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.1
µA
DC Current Gain
hFE
VCE = 2 V, IC = 7 mANote 1
70
140
Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 7 mA, f = 2 GHz
10
13
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
8.5
12
GHz
Feed-back Capacitance
Cre
VCB = 2 V, IE = 0, f = 1 MHzNote 2
0.4
0.6
pF
Insertion Power Gain (1)
|S21e|2
VCE = 2 V, IC = 7 mA, f = 2 GHz
7.5
9
dB
Insertion Power Gain (2)
|S21e|2
VCE = 1 V, IC = 5 mA, f = 2 GHz
7
8.5
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
1.5
2
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.5
2
dB
hFE Ratio
hFE1/hFE2
VCE = 2 V, IC = 7 mA
0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
≤ 350
µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
KB
Marking
T84
hFE Value
70 to 140
TYPICAL CHARACTERISTICS (TA = 25
°C)
Ambient Temperature TA (°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
100
200
0
50
100
150
50
40
30
20
10
0
0.5
1.0
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
VCE = 2 V
30 mW
60 mW
2 Elements in Total
Per Element
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
50
20
10
1
2
5
10
20
50
100
VCE = 2 V
VCE = 1 V
Collector Current IC (mA)




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