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2SB935 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB935 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SB935 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -10 Collector current - Pulse ICP -15 Collector Power Dissipation Tc = 25°C 35 Ta = 25°C 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -10 mA, IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -40V , IE=0 -50 Emitter cut-off current IEBO VEB= -5V , IC=0 -50 Collector-emitter saturation voltage VCE(sat) IC=-7 A, IB=-230mA -0.6 Base - emitter saturation voltage VBE(sat) IC=-7 A, IB=-230mA -1.5 hFE(1) VCE= -2V, IC= -100mA 45 hFE(2) VCE= -2V, IC= -2 A 90 260 Turn-on time ton 0.1 Storage time tstg 0.5 Fall time tf 0.1 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 200 pF Transition frequency fT VCE= -10V, IC= -500mA,f=10MHz 150 MHz IC = – 2A, IB1 = –66mA, IB2 = 66mA us DC current gain V uA V ■ Classification of hfe(2) Type 2SB935-Q 2SB935-P Range 90-180 130-260 |
Similar Part No. - 2SB935_15 |
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Similar Description - 2SB935_15 |
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