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2SB970-S-HF Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB970-S-HF Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Transistors ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● For low-voltage output amplification 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -500 mA Collector Current - Pulse ICP -1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -15 V Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -10 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -7 Collector-base cut-off current ICBO VCB= - 10V , IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-400 mA, IB=-8mA -0.16 -0.3 V Base - emitter saturation voltage VBE(sat) IC=-400 mA, IB=-8mA -0.8 -1.2 VCE= -2V, IC= -500mA 130 350 VCE= -2V, IC= -1A 60 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 22 pF Transition frequency fT VCE= -10V, IE= 50mA,f=200MHz 130 MHz hFE DC current gain ■ Classification of hfe(1) Type 2SB970-R-HF 2SB970-S-HF Range 130-220 180-350 Marking 1RR F 1RS F ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB970-HF |
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