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320S14-U Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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320S14-U Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 5 page THAT 300 Series Low-Noise Matched Transistor Array ICs THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2010, THAT Corporation. Document 600041 Rev 02 FEATURES • 4 Matched NPN Transistors º 300 typical hfe of 100 º 300A minimum hfe of 150 º 300B minimum hfe of 300 • 4 Matched PNP Transistors º 320 typical hfe of 75 • 2 Matched PNP and 2 Matched NPN Transistors º 340 PNP typical hfe of 75 º 340 NPN typical hfe of 100 • Low Voltage Noise º 0.75 nV/ √Hz (PNP) º 0.8 nV/ √Hz (NPN) • High Speed ºfT = 350 MHz (NPN) ºfT = 325 MHz (PNP) • 500 μV matching between devices • Dielectrically Isolated for low crosstalk and high DC isolation • 36V VCEO APPLICATIONS • Low Noise Front Ends • Microphone Preamplifiers • Log/Antilog Amplifiers • Current Sources • Current Mirrors • Multipliers The THAT 300, 320 and 340 are large geometry, 4-transistor, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between transis- tors of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 nV/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log ampli- fiers, and many other applications. The four-NPN transistor array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B). Fabricated in a dielectrically isolated, comple- mentary bipolar process, each transistor is electri- cally insulated from the others by a layer of insulating oxide (not the reverse-biased PN junctions used in conventional arrays). As a result, they exhibit inter-device crosstalk and DC isolation similar to that of discrete transistors. The resulting low collector-to-substrate capacitance produces a typical NPN fT of 350 MHz (325 MHz for the PNPs). Substrate biasing is not required for normal opera- tion, though the substrate should be ac-grounded to optimize speed and minimize crosstalk. An eight-transistor bare-die array with similar performance characteristics (the THAT 380G) is also available from THAT Corporation. Please contact us directly or through your local distributor for more information. Military-grade temperature range packages are available from TT Semiconductor (see www.ttsemiconductor.com for more information). Description SO14 340S14-U DIP14 2-Matched NPN Transistors and 2-Matched PNP Transistors 340P14-U SO14 320S14-U DIP14 4-Matched PNP Transistors 320P14-U SO14 4-Matched NPN Transistors, Beta = 300 min. 300BS14-U SO14 4-Matched NPN Transistors, Beta = 150 min. 300AS14-U SO14 300S14-U DIP14 4-Matched NPN Transistors, Beta = 60 min. 300P14-U Package Configuration Part Number Table 1. Ordering Information |
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