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320S14-U Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # 320S14-U
Description  4 Matched NPN Transistors
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THAT 300 Series
Low-Noise Matched
Transistor Array ICs
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Copyright © 2010, THAT Corporation. Document 600041 Rev 02
FEATURES
• 4 Matched NPN Transistors
º 300 typical hfe of 100
º 300A minimum hfe of 150
º 300B minimum hfe of 300
• 4 Matched PNP Transistors
º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN
Transistors
º 340 PNP typical hfe of 75
º 340 NPN typical hfe of 100
• Low Voltage Noise
º 0.75 nV/ √Hz (PNP)
º 0.8 nV/ √Hz (NPN)
• High Speed
ºfT = 350 MHz (NPN)
ºfT = 325 MHz (PNP)
• 500 μV matching between devices
• Dielectrically Isolated for low crosstalk
and high DC isolation
• 36V VCEO
APPLICATIONS
• Low Noise Front Ends
• Microphone Preamplifiers
• Log/Antilog Amplifiers
• Current Sources
• Current Mirrors
• Multipliers
The THAT 300, 320 and 340 are large
geometry, 4-transistor, monolithic NPN and/or PNP
arrays. They exhibit both high speed and low noise,
with excellent parameter matching between transis-
tors of the same gender. Typical base-spreading
resistance is 25 Ω for the PNP devices (30 Ω for the
low-gain NPNs), so their resulting voltage noise is
under 1 nV/√Hz. This makes the 300 series ideally
suited for low-noise amplifier input stages, log ampli-
fiers, and many other applications. The four-NPN
transistor array is available in versions selected for
hfe with minimums of 150 (300A) or 300 (300B).
Fabricated in a dielectrically isolated, comple-
mentary bipolar process, each transistor is electri-
cally insulated from the others by a layer of
insulating oxide (not the reverse-biased PN junctions
used in conventional arrays). As a result, they exhibit
inter-device crosstalk and DC isolation similar to
that of discrete transistors. The resulting low
collector-to-substrate capacitance produces a typical
NPN fT of 350 MHz (325 MHz for the PNPs).
Substrate biasing is not required for normal opera-
tion, though the substrate should be ac-grounded to
optimize speed and minimize crosstalk.
An eight-transistor bare-die array with similar
performance characteristics (the THAT 380G) is also
available from THAT Corporation. Please contact us
directly or through your local distributor for more
information.
Military-grade
temperature
range
packages are available from TT Semiconductor (see
www.ttsemiconductor.com for more information).
Description
SO14
340S14-U
DIP14
2-Matched NPN Transistors and
2-Matched PNP Transistors
340P14-U
SO14
320S14-U
DIP14
4-Matched PNP Transistors
320P14-U
SO14
4-Matched NPN Transistors, Beta = 300 min.
300BS14-U
SO14
4-Matched NPN Transistors, Beta = 150 min.
300AS14-U
SO14
300S14-U
DIP14
4-Matched NPN Transistors, Beta = 60 min.
300P14-U
Package
Configuration
Part Number
Table 1. Ordering Information


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