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BC860W Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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BC860W Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 3 page  SMD Type www.kexin.com.cn 2 Transistors PNP Transistors BC859W,BC860W (KC859W,KC860W) ■ Electrical Characteristics Ta = 25℃ Symbol Test Conditions Min Typ Max Unit BC859W -30 BC860W -50 BC859W -30 BC860W -45 VEBO IE= -100μA， IC=0 -5 BC859W VCB= -30 V , IE=0 -100 nA BC859W VCB= -30 V , IE=0,TJ = 25℃ -4 uA BC860W VCB= -50 V , IE=0 -15 nA BC860W VCB= -50 V , IE=0,TJ = 25℃ -4 uA IEBO VEB= -5V , IC=0 -100 nA IC=-10 mA, IB=-0.5mA -0.3 IC=-100 mA, IB=-5mA -0.65 VBE(sat) IC=-100 mA, IB=-5mA -1.2 VCE= -5V, IC= -2mA 0.6 0.75 VCE= -5V, IC= -10mA 0.82 BCW859W,860W 220 800 BCW859BW,860BW 220 475 BCW859CW,860CW 420 800 BCW859BW,860BW BCW859CW,860CW Cob VCB= -10 V, IE=ie=0,f=1MHz 5 Ce VEB= -0.5V, IC=ic=0,f=1MHz 10 Transition frequency fT VCE= -5V, IC= -10mA,f=100MHz 100 MHz Emitter output capacitance pF Collector output capacitance 4 4 dB Noise Figure NF BCW859W,860W IC = -200 u A; VCE = -5 V; RS = 2 kΩ;f = 10 Hz to 15.7 kHz IC=-200 u A; VCE = -5 V; RS = 2 kΩ,f = 1 kHz; B = 200 Hz Base - emitter voltage VBE V hFE VCE= -5V, IC= -2mA Emitter cut-off current Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage VCBO VCEO DC current gain V Ic= -100 μA， IE=0 Ic= -1 mA， IB=0 Emitter - base breakdown voltage Collector-base cut-off current ICBO ■ CLASSIFICATION OF hFE Type BC859W BC859BW BC859CW BC860W BC860BW BC860CW Range 220-800 220-475 420-800 220-800 220-475 420-800 Marking 4D* 4B* 4C* 4H* 4F* 4G* |
Similar Part No. - BC860W |
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Similar Description - BC860W |
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