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2SB1201-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1201-R Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SB1201 ■ Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Collector Current - Pulse ICP -4 Collector Power Dissipation Tc = 25℃ 15 0.8 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-50mA -0.3 -0.7 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50mA -0.9 -1.2 VCE= -2V, IC= -100 mA 100 560 VCE= -2V, IC= -1.5 A 40 Turn-ON Time ton 60 Storage Time tstg 450 Fall Time tf 30 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 22 pF Transition frequency fT VCE= -10V, IC= -50mA 150 MHz See specified Test Circuit ns V V uA DC current gain hFE Type 2SB1201-R 2SB1201-S 2SB1201-T 2SB1201-U Range 100-200 140-280 200-400 280-560 ■ Classification of hfe(1) |
Similar Part No. - 2SB1201-R |
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Similar Description - 2SB1201-R |
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