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PDMB300B12 Datasheet(PDF) 3 Page - National Instruments Corporation

Part # PDMB300B12
Description  IGBT
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Manufacturer  NI [National Instruments Corporation]
Direct Link  http://www.NI.com
Logo NI - National Instruments Corporation

PDMB300B12 Datasheet(HTML) 3 Page - National Instruments Corporation

  PDMB300B12_15 Datasheet HTML 1Page - National Instruments Corporation PDMB300B12_15 Datasheet HTML 2Page - National Instruments Corporation PDMB300B12_15 Datasheet HTML 3Page - National Instruments Corporation  
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日本インター株式会社
QS043-401M0062 (4/4)
ＰＤＭＢ３００Ｂ１２
ＰＤＭＢ３００Ｂ１２Ｃ
012
34
0
100
200
300
400
500
600
Forward Voltage VF (V)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃
TC=125℃
0.5
1
2
5
10
20
50
100
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance RG (Ω)
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
VCC=600V
IC=300A
VGE=±15V
TC=25℃
tf
tr
ton
toff
0
600
1200
1800
2400
5
10
20
50
100
200
500
1000
-di/dt (A/μs)
Fig.9- Reverse Recovery Characteristics (Typical)
IRrM
trr
IF=300A
TC=25℃
10 -5
10 -4
10 -3
10 -2
10 -1
110 1
2x10 -4
5x10 -4
1x10 -3
2x10 -3
5x10 -3
1x10 -2
2x10 -2
5x10 -2
1x10 -1
2x10 -1
5x10 -1
Time t (s)
Fig.11- Transient Thermal Impedance
TC=25℃
1 Shot Pulse
FRD
IGBT
0
400
800
1200
1600
0.1
0.2
0.5
1
2
10
20
50
100
200
500
1000
2000
5000
Collector to Emitter Voltage V CE (V)
Fig.10- Reverse Bias Safe Operating Area
RG=1.3Ω
VGE=±15V
TC≦125℃


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