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2SB1667 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1667 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SB1667 ■ Features ● Low saturation voltage ● Audio Frequency Power Amplifier Applications ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -3 Base current IB -0.5 Collector Power Dissipation Tc = 25°C 25 Ta = 25°C 1.5 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -5 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -100 Emitter cut-off current IEBO VEB= -7V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-300mA -0.5 -1.7 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-300mA -1.2 Base - emitter voltage VBE VCE= -5V, IC= -500mA -0.7 -1 hFE(1) VCE= -5V, IC= -500mA 60 300 hFE(2) VCE=- 5V, IC= -3 A 20 Turn-on time ton 0.4 Storage time tstg 1.7 Fall time tf 0.5 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 9 pF Transition frequency fT VCE= -5V, IC= -500mA MHz See specified Test Circuit us DC current gain V nA V 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Classification of hfe(1) Type 2SB1667-O 2SB1667-Y 2SB1667-GR Range 60-120 100-200 150-300 150 |
Similar Part No. - 2SB1667_15 |
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Similar Description - 2SB1667_15 |
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