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2SD1255-P Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1255-P Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1255 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC ● Complementary to 2SB932 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 130 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 4 Collector Current - Pulse ICP 8 Collector Power Dissipation Tc = 25℃ 35 Ta = 25℃ 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 130 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 7 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 10 Emitter cut-off current IEBO VEB= 5V , IC=0 50 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150mA 0.5 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150mA 1.5 hFE(1) VCE= 2V, IC= 100mA 45 hFE(2) VCE= 2V, IC= 1 A 90 260 Turn-on time ton 0.15 Storage time tstg 0.8 Fall time tf 0.15 Transition frequency fT VCE= 10V, IC= 500mA,f=10MHz 30 MHz IC = 1A, IB1 = 100mA, IB2 = –100mA VCC = 50V us DC current gain V V uA ■ Classification of hfe(2) Type 2SD1255-Q 2SD1255-P Range 90-180 130-260 |
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