UPA835 datasheet(3/12 Pages) NEC

Part #	UPA835

Description	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

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Manufacturer	NEC [NEC]

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Data Sheet P14555EJ1V0DS00

3

µµµµPA835TC

(2) Q2

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

ICBO

VCB = 10 V, IE = 0

−−

1.0

µA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

−−

1.0

µA

DC Current Gain

hFE

VCE = 3 V, IC = 7 mA

Note 1

70

−

140

Gain Bandwidth Product

fT

VCE = 3 V, IC = 7 mA, f = 1 GHz

3.0

4.5

−

GHz

Feedback Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHz

Note 2

−

0.7

1.5

pF

Insertion Power Gain

|S21e|2

VCE = 3 V, IC = 7 mA, f = 1 GHz

7.0

9.0

−

dB

Noise Figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

−

1.2

2.5

dB

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

FB

Marking

37

hFE Value of Q1

75 to 150

hFE Value of Q2

70 to 140

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