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UPA835 Datasheet(PDF) 3 Page - NEC |
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UPA835 Datasheet(HTML) 3 Page - NEC |
3 / 12 page Data Sheet P14555EJ1V0DS00 3 µµµµPA835TC (2) Q2 Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector Cutoff Current ICBO VCB = 10 V, IE = 0 −− 1.0 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 −− 1.0 µA DC Current Gain hFE VCE = 3 V, IC = 7 mA Note 1 70 − 140 Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA, f = 1 GHz 3.0 4.5 − GHz Feedback Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz Note 2 − 0.7 1.5 pF Insertion Power Gain |S21e|2 VCE = 3 V, IC = 7 mA, f = 1 GHz 7.0 9.0 − dB Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz − 1.2 2.5 dB Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter. hFE CLASSIFICATION Rank FB Marking 37 hFE Value of Q1 75 to 150 hFE Value of Q2 70 to 140 |
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