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CS64N90 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part No. CS64N90
Description  85V,92A N-Channel Trench Process Power MOSFET
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Maker  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Homepage  http://www.thinkisemi.com
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General Description
-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
Features
● VDS=85V; ID=92A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 64V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Table 1.
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (
VGS=0V)
85
V
VGS
Gate-Source Voltage (
VDS=0V)
±25
V
ID (DC)
Drain Current (DC) at Tc=25℃
92
A
ID (DC)
Drain Current (DC) at Tc=100℃
64.4
A
IDM (pluse)
Drain Current-Continuous@ Current-Pulsed
(Note 1)
368
A
dv/dt
Peak Diode Recovery Voltage
30
V/ns
PD
Maximum Power Dissipation(Tc=25℃)
139
W
Derating Factor
0.93
W/℃
EAS
Single Pulse Avalanche Energy
(Note 2)
625
mJ
TJ,TSTG
Operating Junction and Storage Temperature Range
-55 To 175
℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,V
B
GB=10V,RG=25Ω
Schematic Diagram
VDS = 85 V
ID = 92A
RDS(ON) = 6.2 mΩ
is N
®
CS64N90
Pb Free Plating Product
CS64N90
Pb
85V,92A N-Channel Trench Process Power MOSFET
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● Inverter Application
● Amplifier Application
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© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/5
Rev.05
CS64N90
(TO-220 HeatSink)
CS64N90F
(TO-220F FullPak)
CS64N90B
(TO-263/D2PAK)
CS64N90 series




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