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MMBT3904-HF Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MMBT3904-HF Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type Transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 1 www.kexin.com.cn Features Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o V e s a B - r o t c e ll o C CBO 60 V V e g a tl o V r e tt i m E - r o t c e ll o C CEO 40 V V e g a tl o V e s a B - r e tt i m E EBO 6 V I s u o u n it n o C - t n e rr u C r o t c e ll o C C 0.2 A P n o it a p i s s i D r e w o P r o t c e ll o C C 0.2 W T e r u t a r e p m e T n o it c n u J J 150 T e r u t a r e p m e T e g a r o t S stg -55 to 150 Electrical Characteristics Ta = 25 NPN Transistors MMBT3904-HF (KMBT3904-HF) ● Complementary to MMBT3906 Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage VCBO Ic= 100 μA, IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 40 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 6 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Collector- emitter cut-off current ICEX VCE= 30 V , VEB(off)=- 3V 50 Emitter cut-off current IEBO VEB= 5V , IC=0 100 IC= 10 mA, IB= 1mA 0.2 IC= 50 mA, IB= 5mA 0.3 IC= 10 mA, IB= 1mA 0.65 0.85 IC= 50 mA, IB= 5mA 0.95 hfe(1) VCE= 1V, IC= 10mA 100 300 hfe(2) VCE= 1V, IC= 50mA 60 hfe(3) VCE= 1V, IC= 100mA 30 Delay time td VCC= 3V, VBE(off)=- 0.5V 35 Rise time tr IC= 10mA, IB1= 1mA 35 Storage time ts VCC= 3V, IC= 10mA 200 Fall time tf IB1=IB2= 1mA 50 Transition frequency fT VCE= 20V, IC= 10mA, f=100MHz 300 MHz DC current gain VCE(sat) Collector-emitter saturation voltage Base - emitter saturation voltage VBE(sat) V V ns nA ■ Marking Marking 1AM F |
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