FRX130R4 datasheet(2/5 Pages) INTERSIL

Part #	FRX130R4

Description	Radiation Hardened N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FRX130D, R, H

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

100

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

6A

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

4A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

18

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

11.4

W

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

4.5

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.09

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS

18

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

6A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

18

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJC, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

100

-

V

Gate Threshold Voltage

VGS(TH)

ID = 1mA, VDS = VGS

2.0

4.0

V

Gate-Body Leakage Forward

IGSSF

VGS = +20V

-

100

nA

Gate-Body Leakage Reverse

IGSSR

VGS = -20V

-

100

nA

Zero Gate Voltage Drain Current

IDSS1

IDSS2

IDSS3

VDS = 100V, VGS = 0

VDS = 80V, VGS = 0

VDS = 80V, VGS = 0, TC = 125

oC

-

-1

0.025

0.25

µA

Rated Avalanche Current

IAR

Time = 20

µs-

-

18

A

Drain to Source On-State Volts

VDS(ON)

VGS = 10V, ID = 6A

-

1.130

V

Drain to Source On Resistance

rDS(ON)

VGS = 10V, ID = 4A

-

0.180

Ω

Turn-On Delay Time

td(ON)

VDD = 50V, ID = 6A

-

30

ns

Rise Time

tr

Pulse Width = 3

µs

-

100

Turn-Off Delay Time

td(OFF)

Period = 300

µs, Rg = 25Ω

-

200

Fall Time

tf

0

≤ VGS ≤ 10 (See Test Circuit)

-

100

Gate-Charge Threshold

Qg(TH)

VDD = 50V, ID = 6A

IGS1 = IGS2

0

≤ VGS ≤ 20

1-4

nc

Gate-Charge On State

Qg(ON)

17-70

Gate-Charge Total

QgM

32

-

128

Plateau Voltage

VGP

3

-

12

V

Gate-Charge Source

QgS

3-

14

nc

Gate-Charge Drain

QgD

8-

32

Diode Forward Voltage

VSD

ID = 6A, VGD = 0

0.6

-

1.8

V

Reverse Recovery Time

trr

I = 6A; di/dt = 100A/

µs

-

400

ns

Junction To Case

RθJC

--

11

oC/W

Junction To Ambient

RθJA

Free Air Operation

-

250

FRX130D, FRX130R, FRX130H

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