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FSF450R3 Datasheet(PDF) 2 Page - Intersil Corporation |
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FSF450R3 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 8 page 3-120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSF450D, FSF450R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V Continuous Drain Current TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 9A TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 6A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 27 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 125 W TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 50 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.00 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS 27 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 9A Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 27 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 500 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - 5.0 V TC = 25 oC 1.5 - 4.0 V TC = 125 oC 0.5 - - V Zero Gate Voltage Drain Current IDSS VDS = 400V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC 200 nA Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 9A 5.67 V Drain to Source On Resistance rDS(ON)12 ID =6A, VGS = 12V TC = 25 oC - 0.425 0.600 Ω TC = 125 oC - - 1.20 Ω Turn-On Delay Time td(ON) VDD = 250V, ID =9A, RL = 27.8Ω, VGS = 12V, RGS = 2.35Ω - - 150 ns Rise Time tr - - 140 ns Turn-Off Delay Time td(OFF) - - 180 ns Fall Time tf - - 70 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 250V, ID =9A - - 220 nC Gate Charge at 12V Qg(12) VGS = 0V to 12V - 110 150 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 8.2 nC Gate Charge Source Qgs -21 28 nC Gate Charge Drain Qgd -49 62 nC Plateau Voltage V(PLATEAU) ID = 9A, VDS = 15V - 7 - V Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 3150 - pF Output Capacitance COSS - 540 - pF Reverse Transfer Capacitance CRSS - 150 - pF Thermal Resistance Junction to Case R θJC - - 1.00 oC/W Thermal Resistance Junction to Ambient R θJA -- 48 oC/W FSF450D, FSF450R |
Similar Part No. - FSF450R3 |
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Similar Description - FSF450R3 |
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