FSF450R3 datasheet(2/8 Pages) INTERSIL

Part #	FSF450R3

Description	9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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2 / 8 page

3-120

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSF450D, FSF450R

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

500

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

500

V

Continuous Drain Current

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

9A

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

6A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

27

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

125

W

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

50

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.00

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS

27

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

9A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

27

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

500

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

oC

-

5.0

V

TC = 25

oC

1.5

-

4.0

V

TC = 125

oC

0.5

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 400V,

VGS = 0V

TC = 25

oC-

-

25

µA

TC = 125

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

TC = 25

oC

-

100

nA

TC = 125

oC

200

nA

Drain to Source On-State Voltage

VDS(ON)

VGS = 12V, ID = 9A

5.67

V

Drain to Source On Resistance

rDS(ON)12

ID =6A,

VGS = 12V

TC = 25

oC

-

0.425

0.600

Ω

TC = 125

oC

-

1.20

Ω

Turn-On Delay Time

td(ON)

VDD = 250V, ID =9A,

RL = 27.8Ω, VGS = 12V,

RGS = 2.35Ω

-

150

ns

Rise Time

tr

-

140

ns

Turn-Off Delay Time

td(OFF)

-

180

ns

Fall Time

tf

-

70

ns

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 250V,

ID =9A

-

220

nC

Gate Charge at 12V

Qg(12)

VGS = 0V to 12V

-

110

150

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

-

8.2

nC

Gate Charge Source

Qgs

-21

28

nC

Gate Charge Drain

Qgd

-49

62

nC

Plateau Voltage

V(PLATEAU) ID = 9A, VDS = 15V

-

7

-

V

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

-

3150

-

pF

Output Capacitance

COSS

-

540

-

pF

Reverse Transfer Capacitance

CRSS

-

150

-

pF

Thermal Resistance Junction to Case

R

θJC

-

1.00

oC/W

Thermal Resistance Junction to Ambient

R

θJA

--

48

oC/W

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