Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

FSGYE230D1 Datasheet(PDF) 6 Page - Intersil Corporation

Part # FSGYE230D1
Description  Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSGYE230D1 Datasheet(HTML) 6 Page - Intersil Corporation

  FSGYE230D1 Datasheet HTML 1Page - Intersil Corporation FSGYE230D1 Datasheet HTML 2Page - Intersil Corporation FSGYE230D1 Datasheet HTML 3Page - Intersil Corporation FSGYE230D1 Datasheet HTML 4Page - Intersil Corporation FSGYE230D1 Datasheet HTML 5Page - Intersil Corporation FSGYE230D1 Datasheet HTML 6Page - Intersil Corporation FSGYE230D1 Datasheet HTML 7Page - Intersil Corporation FSGYE230D1 Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 6 / 8 page
background image
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Test Circuits and Waveforms (Continued)
VDS
DUT
RGS
0V
VGS = 12V
VDD
RL
td(ON)
tr
90%
10%
VDS
90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±30V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
Drain to Source On Resistance
rDS(ON)
TC = 25
oC at Rated I
D
±20% (Note 8)
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Unclamped Inductive Switching
VGS(PEAK) = 20V, L = 0.1mH; Limit = 36A
VGS(PEAK) = 20V, L = 0.1mH; Limit = 36A
Thermal Response
tH = 10ms; VH = 15V; IH = 1A; LIMIT = 74mV
tH = 10ms; VH = 15V; IH = 1A; LIMIT = 74mV
Gate Stress
VGS = 45V, t = 250µsVGS = 45V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150
oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150
oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150
oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150
oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A, Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 160V, t = 10ms
0.45
A
Thermal Impedance
∆VSD
tH = 100ms; VH = 25V; IH = 1A
165
mV
FSGYE230R


Similar Part No. - FSGYE230D1

ManufacturerPart #DatasheetDescription
logo
Intersil Corporation
FSGYC260D1 INTERSIL-FSGYC260D1 Datasheet
82Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000
FSGYC260R INTERSIL-FSGYC260R Datasheet
82Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000
FSGYC260R3 INTERSIL-FSGYC260R3 Datasheet
82Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000
FSGYC260R4 INTERSIL-FSGYC260R4 Datasheet
82Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000
More results

Similar Description - FSGYE230D1

ManufacturerPart #DatasheetDescription
logo
Intersil Corporation
FSGS230R INTERSIL-FSGS230R Datasheet
78Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
June 2000
FSGYC260R INTERSIL-FSGYC260R Datasheet
82Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
May 2000
FSJ163D INTERSIL-FSJ163D Datasheet
56Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 1999
FSYC055D INTERSIL-FSYC055D Datasheet
49Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998
FSYE430D INTERSIL-FSYE430D Datasheet
58Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 1999
FSYA450D INTERSIL-FSYA450D Datasheet
56Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
March 1999
FSPYE230R INTERSIL-FSPYE230R Datasheet
83Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
May 2000
FSL214D INTERSIL-FSL214D Datasheet
57Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
October 1998
FSPL230R INTERSIL-FSPL230R Datasheet
81Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 2000
FSYE23A0D INTERSIL-FSYE23A0D Datasheet
57Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
May 1999
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com