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FSGYE230R3 Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSGYE230R3
Description  Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSGYE230R3 Datasheet(HTML) 4 Page - Intersil Corporation

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4
FIGURE 3. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
Performance Curves Unless Otherwise Specified (Continued)
300
100
10
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
10
14
12
2
4
6
8
10
1
1
0.1
10
100
1000
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
AREA MAY BE
LIMITED BY rDS(ON)
OPERATION IN THIS
100
µs
1ms
10ms
TC = 25
oC
CHARGE
QGD
QG
VG
QGS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms, VGS = 12V, ID = 7A
10
8
6
4
2
0
200
160
120
80
40
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
VGS = 8V
VGS = 10V
VGS = 12V
VGS = 14V
DESCENDING ORDER
FSGYE230R


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