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2SB1197 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1197 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type SMD Type Transistors 1 www.kexin.com.cn Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o V e s a b - r o t c e ll o C CBO -40 V V e g a tl o V r e tt i m e - r o t c e ll o C CEO -32 V V e g a tl o V e s a b - r e tt i m E EBO -5 V I t n e rr u c r o t c e ll o C C -0.8 A P n o it a p i s s i d r e w o p r o t c e ll o C C 0.2 W T e r u t a r e p m e t n o it c m u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 Electrical Characteristics Ta = 25 ti n U x a M p y T n i M s n o ti i d n o t s e T l o b m y S r e t e m a r a P C Collector-base breakdown voltag VCBO IC = -50 A -40 V Collector-emitter breakdown voltage V CEO IC V 2 3 - A m 1 - = Emitter-base breakdown voltage VEBO IE = -50 A -5 V I t n e rr u c ff o t u c r o t c e ll o C CBO VCB 5 . 0 - V 0 2 - = A I t n e r r u c ff o t u c r e tt i m E EBO VEB 5 . 0 - V 4 - = A Collector-Emitter Saturation Voltage VCE(sat) IC = -0.5A , IB V 5 . 0 - A m 0 5 - = h o it a r r e f s n a rt t n e r r u c C D FE VCE = -3V , IC = -100mA 120 390 C e c n a ti c a p a C t u p t u O ob VCB = -10V , IE = 0A , f = 1MHz 12 30 pF f y c n e u q e rf n o it i s n a r T T VCE = -5V , IE = 50mA , f = 100MHz 200 MHz hFE Classification PNP Transistors 2SB1197 (2SB1197K) Type 2SB1197/K-Q 2SB1197/K-Q Range 120-270 180-390 Marking AHQ AHR 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
Similar Part No. - 2SB1197_15 |
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Similar Description - 2SB1197_15 |
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