Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

FSL130R1 Datasheet(PDF) 3 Page - Intersil Corporation

Part # FSL130R1
Description  8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSL130R1 Datasheet(HTML) 3 Page - Intersil Corporation

  FSL130R1 Datasheet HTML 1Page - Intersil Corporation FSL130R1 Datasheet HTML 2Page - Intersil Corporation FSL130R1 Datasheet HTML 3Page - Intersil Corporation FSL130R1 Datasheet HTML 4Page - Intersil Corporation FSL130R1 Datasheet HTML 5Page - Intersil Corporation FSL130R1 Datasheet HTML 6Page - Intersil Corporation FSL130R1 Datasheet HTML 7Page - Intersil Corporation FSL130R1 Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
3-31
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 8A
0.6
-
1.8
V
Reverse Recovery Time
trr
ISD = 8A, dISD/dt = 100A/µs
-
-
330
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
100
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 80V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 8A
-
1.93
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 5A
-
0.230
NOTES:
1. Pulse test, 300
µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
µ)
Single Event Effects Safe Operating
Area
SEESOA
Ni
28
43
-20
100
Br
37
36
-10
100
Br
37
36
-15
80
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
120
100
80
60
40
20
0
0
-10
-15
-20
-25
-5
VGS (V)
LET = 37MeV/mg/cm2, RANGE = 36
µ
LET = 26MeV/mg/cm2, RANGE = 43
µ
TEMP = 25oC
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
300
100
10
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSL130D, FSL130R


Similar Part No. - FSL130R1

ManufacturerPart #DatasheetDescription
logo
GOOD-ARK Electronics
FSL13 GOOD-ARK-FSL13 Datasheet
390Kb / 4P
   Surface Mount Schottky Rectifier
logo
Fairchild Semiconductor
FSL136HR FAIRCHILD-FSL136HR Datasheet
1,004Kb / 13P
   Green Mode Fairchild Power Switch (FPS??
logo
ON Semiconductor
FSL136HR ONSEMI-FSL136HR Datasheet
565Kb / 15P
   Green Mode Power Switch
April, 2020 ??Rev. 3
FSL136HRL ONSEMI-FSL136HRL Datasheet
565Kb / 15P
   Green Mode Power Switch
April, 2020 ??Rev. 3
FSL136HRLX ONSEMI-FSL136HRLX Datasheet
565Kb / 15P
   Green Mode Power Switch
April, 2020 ??Rev. 3
More results

Similar Description - FSL130R1

ManufacturerPart #DatasheetDescription
logo
Intersil Corporation
FSS230D INTERSIL-FSS230D Datasheet
46Kb / 8P
   8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSS130D INTERSIL-FSS130D Datasheet
45Kb / 8P
   11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSJ160D INTERSIL-FSJ160D Datasheet
60Kb / 9P
   70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL110D INTERSIL-FSL110D Datasheet
58Kb / 8P
   3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
October 1998
FSL13A0D INTERSIL-FSL13A0D Datasheet
71Kb / 8P
   9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1999
FSS13A0D INTERSIL-FSS13A0D Datasheet
71Kb / 8P
   2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 2000
JANSR2N7395 INTERSIL-JANSR2N7395 Datasheet
45Kb / 8P
   8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET
FSF150D INTERSIL-FSF150D Datasheet
45Kb / 8P
   25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSS9130D INTERSIL-FSS9130D Datasheet
44Kb / 8P
   6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSJ9160D INTERSIL-FSJ9160D Datasheet
46Kb / 8P
   44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com