FSL9130D1 datasheet(3/8 Pages) INTERSIL

Part #	FSL9130D1

Description	5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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3-175

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

VSD

ISD = 5A

-0.6

-

-1.8

V

Reverse Recovery Time

trr

ISD = 5A, dISD/dt = 100A/µs

-

170

ns

Electrical Speciﬁcations up to 100K RAD TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

BVDSS

VGS = 0, ID = 1mA

-100

-

V

Gate to Source Threshold Volts

(Note 3)

VGS(TH)

VGS = VDS, ID = 1mA

-2.0

-6.0

V

Gate to Body Leakage

(Notes 2, 3)

IGSS

VGS = ±20V, VDS = 0V

-

100

nA

Zero Gate Leakage

(Note 3)

IDSS

VGS = 0, VDS = -80V

-

25

µA

Drain to Source On-State Volts

(Notes 1, 3)

VDS(ON)

VGS = -12V, ID = 5A

-

-3.57

V

Drain to Source On Resistance

(Notes 1, 3)

rDS(ON)12

VGS = -12V, ID = 3A

-

0.680

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) (Note 4)

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating

Area

SEESOA

Ni

26

43

20

-100

Br

37

36

10

-100

Br

37

36

15

-80

Br

37

36

20

-50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

-120

-100

-80

-60

-40

-20

0

010

15

20

25

5

LET = 37MeV/mg/cm2, RANGE = 36

µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

LET = 26MeV/mg/cm2, RANGE = 43

µ

VGS (V)

-300

-100

-10

DRAIN SUPPLY (V)

-1000

ILM = 10A

300A

1E-4

1E-5

1E-6

-30

100A

30A

1E-7

1E-3

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