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FSR1110D Datasheet(PDF) 3 Page - Intersil Corporation |
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FSR1110D Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 9 page 3 Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = 1.0A 0.6 - 1.8 V Reverse Recovery Time trr ISD = 1.0A, dISD/dt = 100A/µs - - 110 ns Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 100 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 80V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 1.0A - 0.710 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 0.6A - 0.680 Ω NOTES: 1. Pulse test, 300 µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS. Single Event Effects (SEB, SEGR) Note 4 TEST SYMBOL ENVIRONMENT (NOTE 5) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE ( µ) Single Event Effects Safe Operating Area SEESOA Ni 28 43 -20 100 Br 37 36 -10 100 Br 37 36 -15 80 Br 37 36 -20 50 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). FSR1110D, FSR1110R |
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