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FSYE23A0D Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSYE23A0D
Description  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYE23A0D Datasheet(HTML) 4 Page - Intersil Corporation

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4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
10
8
6
4
2
10
1
1
0.1
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
10
100
1000
100
AREA MAY BE
LIMITED BY rDS(ON)
OPERATION IN THIS
100
µs
1ms
10ms
TC = 25
oC
CHARGE
QGD
QG
VG
QGS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms,VGS = 12V, ID = 5A
10-5
10-4
10-3
10-2
10-1
100
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (s)
1
10
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.5
0.02
0.1
0.01
0.2
101
0.05
FSYE23A0D, FSYE23A0R


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