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FSYC9055R1 Datasheet(PDF) 1 Page - Intersil Corporation |
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FSYC9055R1 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 8 page 1 July 1999 FSYC9055D, FSYC9055R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features • 59A, -60V, rDS(ON) = 0.027Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 6nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14Neutrons/cm2g Formerly available as type TA17750. Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hard- ness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numer- ous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc- ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula- tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet. Symbol Package SMD-2 Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSYC9055D1 10K TXV FSYC9055D3 100K Commercial FSYC9055R1 100K TXV FSYC9055R3 100K Space FSYC9055R4 G D S CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1999 File Number 4525.1 [ /Title (FSYC 9055D, FSYC 9055R) /Sub- ject (Radia- tion Hard- ened, SEGR Resis- tant P- Chan- nel Power MOS- FETs) /Autho r () /Key- words (Radia- tion Hard- ened, SEGR Resis- tant P- Chan- nel Power MOS- FETs) /Cre- ator () /DOCI OBSOLETE PRODUCT POSSIBLE SUBSTITUTE PRODUCT FSTYC9055D , FSTYC9055R |
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