FSYC9160R1 datasheet(2/8 Pages) INTERSIL

Part #	FSYC9160R1

Description	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSYC9160D, FSYC9160R

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-100

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-100

V

Continuous Drain Current

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

47

A

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

30

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

141

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

208

W

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

83

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . IAS

141

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

47

A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

141

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

-100

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

oC

-

-7.0

V

TC = 25

oC

-2.0

-

-6.0

V

TC = 125

oC

-1.0

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = -80V,

VGS = 0V

TC = 25

oC-

-

25

µA

TC = 125

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

TC = 25

oC

-

100

nA

TC = 125

oC

-

200

nA

Drain to Source On-State Voltage

VDS(ON)

VGS = -12V, ID = 47A

-

-2.74

V

Drain to Source On Resistance

rDS(ON)12

ID = 30A,

VGS = -12V

TC = 25

oC

-

0.034

0.053

Ω

TC = 125

oC

-

0.083

Ω

Turn-On Delay Time

td(ON)

VDD = -50V, ID = 47A,

RL = 1.1Ω, VGS = -12V,

RGS = 2.35Ω

-

50

ns

Rise Time

tr

-

75

ns

Turn-Off Delay Time

td(OFF)

-

100

ns

Fall Time

tf

-

50

ns

Total Gate Charge

Qg(TOT)

VGS = 0V to -20V

VDD = -50V,

ID = 47A

-

410

nC

Gate Charge at 12V

Qg(12)

VGS = 0V to -12V

-

220

250

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to -2V

-

17

nC

Gate Charge Source

Qgs

-48

66

nC

Gate Charge Drain

Qgd

-

85

120

nC

Plateau Voltage

V(PLATEAU) ID = 47A, VDS = -15V

-

-7

-

V

Input Capacitance

CISS

VDS = -25V, VGS = 0V,

f = 1MHz

-

5600

-

pF

Output Capacitance

COSS

-

1550

-

pF

Reverse Transfer Capacitance

CRSS

-

560

-

pF

Thermal Resistance Junction to Case

R

θJC

-

0.6

oC/W

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