FSYE923A0R3 datasheet(2/8 Pages) INTERSIL

Part #	FSYE923A0R3

Description	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSYE923A0D, FSYE923A0R

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

-200

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

-200

V

Continuous Drain Current

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

6A

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

4A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

18

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

42

W

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

17

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.33

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS

18

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

6A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

18

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

-200

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

oC

-

-7.0

V

TC = 25

oC

-2.0

-

-6.0

V

TC = 125

oC

-1.0

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = -160V,

VGS = 0V

TC = 25

oC-

-

25

µA

TC = 125

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

TC = 25

oC

-

100

nA

TC = 125

oC

-

200

nA

Drain to Source On-State Voltage

VDS(ON)

VGS = -12V, ID = 6A

-

-4.29

V

Drain to Source On Resistance

rDS(ON)12

ID = 4A,

VGS = -12V

TC = 25

oC

-

0.530

0.650

Ω

TC = 125

oC

-

1.18

Ω

Turn-On Delay Time

td(ON)

VDD = -100V, ID = 6A,

RL = 16.7Ω, VGS = -12V,

RGS = 7.5Ω

-

15

ns

Rise Time

tr

-

30

ns

Turn-Off Delay Time

td(OFF)

-

50

ns

Fall Time

tf

-

35

ns

Total Gate Charge

Qg(TOT)

VGS = 0V to -20V

VDD = -100V,

ID = 6A

-

62

nC

Gate Charge at 12V

Qg(12)

VGS = 0V to -12V

-

37

43

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to -2V

-

2.5

nC

Gate Charge Source

Qgs

-

5.8

7.5

nC

Gate Charge Drain

Qgd

-17

21

nC

Plateau Voltage

V(PLATEAU) ID = 6A, VDS = -15V

-

-6

-

V

Input Capacitance

CISS

VDS = -25V, VGS = 0V,

f = 1MHz

-

950

-

pF

Output Capacitance

COSS

-

200

-

pF

Reverse Transfer Capacitance

CRSS

-55-

pF

Thermal Resistance Junction to Case

R

θJC

-

3.0

oC/W

FSYE923A0D, FSYE923A0R

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