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Die Characteristics

DIE DIMENSIONS:

65 mils x 52 mils x 19 mils

1650

µm x 1310µm x 483µm

METALLIZATION:

Type: Aluminum, 1% Copper

Thickness: 16k

Å

SUBSTRATE POTENTIAL

V-

PASSIVATION:

Type: Nitride over Silox

Silox Thickness: 12k

Å

Nitride Thickness: 3.5k

Å

TRANSISTOR COUNT:

34

PROCESS:

High Frequency Bipolar Dielectric Isolation

Metallization Mask Layout

HA-2850

V-

+IN

-IN

OUT

V+

HA-2850