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2SC3518-Z Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3518-Z Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SC3518-Z ■ Features ● High DC current gain ● Low saturation voltage ● Complementary to 2SA1385-Z 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 5 Collector Current - Pulse * ICP 7 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A * PW ≤ 10ms,Duty Cycle ≤ 50℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage VCBO Ic= 100 μA, IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 7 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 7V , IC=0 0.1 Collector-emitter saturation voltage * VCE(sat) IC= 2A, IB= 200mA 0.3 Base - emitter saturation voltage * VBE(sat) IC= 2A, IB= 200mA 1.2 VCE= 1V, IC= 2A 100 400 VCE= 1V, IC= 5A 50 Turn-on time ton 0.07 1 Storage time ts 0.8 2.5 Fall time tf 0.12 1 Transition frequency * fT VCE= 10V, IC= 500mA 120 MHz V V uA us DC current gain * hFE IC=2A,VCC=10V,RL=5,IB1=-IB2=0.2A * Pulsed: PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Marking M L K Range 100-200 160-320 200-400 |
Similar Part No. - 2SC3518-Z_15 |
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Similar Description - 2SC3518-Z_15 |
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